Breakdown phenomena in semiconductors and semiconductor devices /
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
| Основен автор: | Levinshtein, M. E. |
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| Други автори: | Kostamovaara, Juha., Vainshtein, Sergey. |
| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
New Jersey ; London :
World Scientific,
℗♭2005.
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| Серия: |
Selected topics in electronics and systems ;
v. 36. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=174564 |
| Подобни документи: |
Print version::
Breakdown phenomena in semiconductors and semiconductor devices. |
| Онлайн достъп от Библиотека ”Паница” на Американския университет в България: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=174564 |
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| Провери в Paniza Library, AUBG | Сигнатура: |
TK7871.85 .L48 2005eb |
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