TCAD for Si, SiGe and GaAs integrated circuits /
The first book that deals with a broad spectrum of process and device design, and modelling issues related to various semiconductor devices. This monograph attempts to bridge the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heteros...
| Основни автори: | Armstrong, G. A., Maiti, C. K. (Author) |
|---|---|
| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
London :
Institution of Engineering and Technology,
2007.
|
| Серия: |
IET circuits, devices and systems series ;
v. 21. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=292141 |
| Подобни документи: |
Print version::
TCAD for Si, SiGe and GaAs integrated circuits. |
| Резюме: |
The first book that deals with a broad spectrum of process and device design, and modelling issues related to various semiconductor devices. This monograph attempts to bridge the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research and development engineers and scientists involved in microelectronics technology and device design via Technolog. |
|---|---|
| Физически характеристики: |
1 online resource (xi, 443 pages) : illustrations. |
| Библиография: |
Includes bibliographical references and index. |
| ISBN: |
9780863412226 086341222X |