BSIM4 and MOSFET modeling for IC simulation /
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emph...
| Основен автор: | Liu, Weidong. |
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| Други автори: | Hu, Chenming. |
| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
Singapore :
World Scientific Pub. Co.,
2011.
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| Серия: |
International series on advances in solid state electronics and technology.
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| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=514852 |
| Подобни документи: |
Print version::
BSIM4 and MOSFET modeling for IC simulation. |
| Резюме: |
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be ro. |
|---|---|
| Физически характеристики: |
1 online resource (xix, 414 pages) : illustrations. |
| Библиография: |
Includes bibliographical references and index. |
| ISBN: |
9789812813992 9812813993 |