Fabrication of GaAs devices /
This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Tr...
| Основен автор: | Baca, A. G. |
|---|---|
| Автор-организации: | Institution of Electrical Engineers. |
| Други автори: | Ashby, Carol Iris Hill, 1953- |
| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
London :
Institution of Electrical Engineers,
℗♭2005.
|
| Серия: |
EMIS processing series ;
no. 6. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=292236 |
| Подобни документи: |
Print version::
Fabrication of GaAs devices. |
Съдържание:
- Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; Index.