Defects and diffusion in semiconductors : an annual retrospective XIV /
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized in...
| Други автори: | Fisher, D. J., (Editor) |
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| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
Durnten-Zurich :
TTP,
[2012]
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| Серия: |
Diffusion and defect data. Defect and diffusion forum ;
v. 332. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=517432 |
| Подобни документи: |
Print version::
Defects and diffusion in semiconductors |
| Онлайн достъп от Библиотека ”Паница” на Американския университет в България: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=517432 |
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| Провери в Paniza Library, AUBG | Сигнатура: |
QC611.6.D4 |
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