Корично изображение Електронен

III-nitride devices and nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by...

Пълно описание

Други автори: Feng, Zhe Chuan.
Формат: Електронен
Език: English
Публикувано: London : Imperial College Press, ℗♭2008.
Предмети:
Semiconductors > Materials.
Gallium nitride.
Nanotechnology.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Electronic books.
Онлайн достъп: http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=516756
Подобни документи: Print version:: III-nitride devices and nanoengineering.
Онлайн достъп от Библиотека ”Паница” на Американския университет в България:

http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=516756
Провери в Paniza Library, AUBG Сигнатура: TK7871.15.N57 A1298 2008eb

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