GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
| Други автори: | Shur, Michael., Davis, Robert F. 1942- |
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| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
River Edge, N.J. ; London :
World Scientific.,
℗♭2004.
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| Серия: |
Selected topics in electronics and systems ;
v. 33. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830 |
| Подобни документи: |
Print version::
GaN-based materials and devices. |
| Онлайн достъп от Библиотека ”Паница” на Американския университет в България: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830 |
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| Провери в Paniza Library, AUBG | Сигнатура: |
TK7871.15.G33 G36 2004eb |
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