GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
| Други автори: | Shur, Michael., Davis, Robert F. 1942- |
|---|---|
| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
River Edge, N.J. ; London :
World Scientific.,
℗♭2004.
|
| Серия: |
Selected topics in electronics and systems ;
v. 33. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=129830 |
| Подобни документи: |
Print version::
GaN-based materials and devices. |
Съдържание:
- Materials Properties of Nitrides. Summary/
- S.L. Rumyantsev, M.S. Shur, and M.E. Levinshtein
- Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/
- A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis
- Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/
- S. Einfeldt, Z.J. Reitmeier, and R.F. Davis
- Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/
- P.R. Tavernier, E.V. Etzkorn, and D.R. Clarke
- Cracking of GaN Films/
- E.V. Etzkorn and D.R. Clarke
- Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/
- J. Lee, R.F. Davis, and R.J. Nemanich
- Electronic Properties of GaN(0001)
- Dielectric Interfaces/
- T.E. Cook, Jr., C.C. Fulton, W.J. Mecouch, R.F. Davis, G. Lucovsky, and R.J. Nemanich
- Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/
- K.W. Kim, V.A. Kochelap, V.N. Sokolov, and S.M. Komirenko
- High Field Transport in AlN/
- R. Collazo, R. Schlesser, and Z. Sitar
- Generation-Recombination Noise in GaN-Based Devices/
- S.L. Rumyantsev, N. Pala, M.S. Shur, M.E. Levinshtein, R. Gaska, M. Asif Khan, and G. Simin
- Insulated Gate 111-N Heterostructure Field-Effect Transistors/
- G. Simin, M. Asif Khan, M.S. Shur, and R. Gaska
- High Voltage AIGaN/GaN Heterojunction Transistors/
- L.S. McCarthy, N-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U.K. Mishra
- Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/
- Y. Gao, I. Ben-Yaacov, U. Mishra, and E. Hu
- n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/
- S. Estrada, E. Hu, and U. Mishra.