Rapid thermal processing and beyond applications in semiconductor processing : special topic volume : selected papers from RTP specialists all over the world, Dornstadt, Germany /
Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to red...
| Други автори: | Lerch, W., Niess, J. |
|---|---|
| Формат: | Електронен |
| Език: | English |
| Публикувано: |
Stafa-Zurich, Switzerland ; United Kingdom ; Enfield, NH :
Trans-Tech Publications,
℗♭2008.
|
| Серия: |
Materials science forum ;
v. 573-574. |
| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=512841 |
| Подобни документи: |
Print version::
Rapid thermal processing and beyond. |
Съдържание:
- Rapid Thermal Processing and beyond: Applications in Semiconductor Processing; Dedication III; Dedication 2; Dedication I; Preface; Table of Contents; Chapter 1: Historical RTP Review; The Expanding Role of Rapid Thermal Processing in CMOS Manufacturing; Evolution of Commercial RTP Modules; Chapter 2: Wafer Parameter Tuning and Defects; Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing; Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers; High Temperature RTP Application in SOI Manufacturing.
- Chapter 3: Surface Preparation and Gate DielectricsCleaning of Silicon Surfaces for Nanotechnology; Heavy Water in Gate Stack Processing; Advanced Gate Dielectric Development for VLSI Technology; A Growth Kinetics Model for the Radical Oxidation of Silicon; Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm; High-K: Latest Developments and Perspectives; Production Worthy ALD in Batch Reactors; Chapter 4: USJ Formation and Metrology; Ultra Shallow Depth Profiling with SIMS.
- Implant Annealing
- An Evolution from Soak over Spike to Millisecond AnnealingA Light-Induced Annealing of Silicon Implanted Layers; Laser Annealing of Implanted Semiconductor Layers
- One Bridge to Nano-Processing; An Overview of ms Annealing for Deep Sub-Micron Activation; Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals; Modeling and Simulation of Advanced Annealing Processes; Vacancy Engineering
- An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping; Ultra-Shallow Junction Formation Using Rapid Thermal Processing.
- Ultra-Rapid Thermal Process for ULSIsAdvanced Millisecond Annealing Technologies and its Applications and Concerns on Advanced Logic LSI Fabrication Processes ; Doping Strategies for FinFETs; Chapter 5: Advanced Silicides Formation; RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and pMOS (Ni-Rich Silicide) Gates on HfSiON; Chapter 6: Pattern Effects; A Short History of Pattern Effects in Thermal Processing; Conduction Heating in RTP Fast, and Pattern-Independent.
- Advanced Annealing Schemes for High-Performance SOI Logic TechnologiesChapter 7: Temperature Measurement; Model Based Measurement in Advanced Rapid Thermal Processing; Chapter 8: Flash Annealing for ULSI and Beyond Si; Short Time Thermal Processing: From Electronics via Photonics to Pipe Organs of the 17th Century; Keywords Index; Authors Index.