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III-nitride : semiconductor materials /

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This...

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Други автори: Feng, Zhe Chuan.
Формат: Електронна книга
Език: English
Публикувано: London : Singapore ; Hackensack, NJ : Imperial College Press ; Distributed by World Scientific, ℗♭2006.
Предмети:
Semiconductors > Materials.
Nitrides.
Semiconducteurs.
Nitrures > Proprietes electriques.
Electronique > Materiaux.
Depo‚t en phase vapeur par organometalliques.
SCIENCE > Chemistry > Physical & Theoretical.
Electronic books.
Онлайн достъп: http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210705
Съдържание:
  • Cover
  • Contents
  • Preface
  • Chapter 1 Hydride vapor phase epitaxy of group III nitride materials
  • 1. Introduction
  • 2. Experiment
  • 3. Material Properties
  • 3.1. Undoped GaN layers
  • 3.2. Si-doped GaN layers
  • 3.3. Mg-doped GaN layers
  • 3.4. Zn-doped GaN layers
  • 3.5. AlN layers
  • 3.6. AlGaN layers
  • 3.7. InN and InGaN layers
  • 4. New directions in HVPE development
  • 4.1. Large area and multi wafer HVPE growth
  • 4.2. Multi-layer structures
  • 4.3. P-n junctions
  • 4.4. Structures with two dimensional carrier gas
  • 4.5. Nano structures and porous materials
  • 5. Applications of HVPE grown group III nitride materials
  • 5.1. Substrate applications
  • 5.2. Device Applications
  • 6. Conclusions
  • Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials
  • 1. History of Reactor Development for III-Nitrides.

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