Characterization in compound semiconductor processing /
This volume has been written to aid scientists and engineers working with compound semiconductor materials and devices in the selection and application of various analytical techniques. It highlights analytical problems that occur at all stages of materials or device processing (substrate preparatio...
| Други автори: | Strausser, Yale., McGuire, G. E. |
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| Формат: | Електронна книга |
| Език: | English |
| Публикувано: |
New York :
Momentum Press,
1995.
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| Серия: |
Materials characterization series.
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| Предмети: | |
| Онлайн достъп: |
http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=501136 |
| Резюме: |
This volume has been written to aid scientists and engineers working with compound semiconductor materials and devices in the selection and application of various analytical techniques. It highlights analytical problems that occur at all stages of materials or device processing (substrate preparation, epitaxial growth, dielectric film deposition, contact formation, and dopant introduction) and describes the application of a variety of analysis techniques in solving them. These techniques are illustrated in the investigation of surfaces, interfaces, thin films, defects, and impurities that affect material properties, processing and, ultimately, device performance. The techniques discussed are used as follow-up approaches to the simple electrical tests usually performed during device fabrication. The electrical tests are often insufficient, on their own, to pin down the origin of a problem, though they may indicate there is one. |
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| Физически характеристики: |
1 online resource (xiv, 199 pages) : illustrations. |
| Библиография: |
Includes bibliographical references and index. |
| ISBN: |
9781606500439 1606500430 |