Корично изображение Електронна книга

Characterization in compound semiconductor processing /

This volume has been written to aid scientists and engineers working with compound semiconductor materials and devices in the selection and application of various analytical techniques. It highlights analytical problems that occur at all stages of materials or device processing (substrate preparatio...

Пълно описание

Други автори: Strausser, Yale., McGuire, G. E.
Формат: Електронна книга
Език: English
Публикувано: New York : Momentum Press, 1995.
Серия: Materials characterization series.
Предмети:
Compound semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Electronic books.
Онлайн достъп: http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=501136
Съдържание:
  • Preface to the reissue of the Materials characterization series
  • Preface to series
  • Preface to the reissue of Characterization of compound semiconductor processing
  • Preface
  • Contributors.
  • 1. Characterization of III-V thin films for electronic devices
  • 1.1. Introduction
  • 1.2. Surface characterization of GaAs wafers
  • 1.3. Ion implantation
  • 1.4. Epitaxial crystal growth
  • 1.5. Summary.
  • 2. III-V compound semiconductor films for optical applications
  • 2.1. Introduction
  • 2.2. Growth rate/layer thickness
  • 2.3. Composition analysis
  • 2.4. Impurity and dopant analysis
  • 2.5. Electrical properties in optical structures
  • 2.6. Optical properties in single and multilayer structures
  • 2.7. Interface properties in multilayer structures
  • 2.8. Summary.
  • 3. Contacts
  • 3.1. Introduction
  • 3.2. In situ probes
  • 3.3. Unpatterned test structures
  • 3.4. Patterned test structures.
  • 4. Dielectric insulating layers
  • 4.1. Introduction
  • 4.2. Oxides and oxidation
  • 4.3. Heteromorphic insulators
  • 4.4. Chemical modification of GaAs surfaces
  • 4.5. Indium phosphide-insulator interfaces
  • 4.6. Heterojunction quasi-insulator interfaces
  • 4.7. Epitaxial fluoride insulators
  • 4.8. Commentary.
  • 5. Other compound semiconductor films
  • 5.1. Introduction
  • 5.2. Substrates and the CdTe surface (interface 1)
  • 5.3. Epitaxial HgCdTe materials (between interfaces 2 and 5)
  • 5.4. Heterojunction interfaces (interface 3)
  • 5.5. HgCdTe surface preparation (interfaces 4 and 5)
  • 5.6. Summary.
  • 6. Deep level transient spectroscopy: a case study on GaAs
  • 6.1. Introduction
  • 6.2. DLTS technique: general features
  • 6.3. Fabrication and qualification of Schottky diodes
  • 6.4. DLTS system
  • 6.5. DLTS measurement procedure
  • 6.6. Data analysis
  • 6.7. EL2 center
  • 6.8. Summary.
  • Appendix, technique summaries
  • 1. Auger electron spectroscopy (AES)
  • 2. Ballistic electron emission microscopy (BEEM)
  • 3. Capacitance-voltage (C-V) measurements
  • 4. Deep level transient spectroscopy (DLTS)
  • 5. Dynamic secondary ion mass spectrometry (D-SIMS)
  • 6. Electron beam induced current (EBIC) microscopy
  • 7. Energy-dispersive x-ray spectroscopy (EDS)
  • 8. Focused ion beams (FIBS)
  • 9. Fourier transform infrared spectroscopy (FTIR)
  • 10. Hall effect resistivity measurements
  • 11. Inductively coupled plasma mass spectrometry (ICPMS)
  • 12. Light microscopy
  • 13. Low-energy electron diffraction (LEED)
  • 14. Neutron activation analysis (NAA)
  • 15. Optical scatterometry
  • 16. Photoluminescence (PL)
  • 17. Raman spectroscopy
  • 18. Reflection high-energy electron diffraction (RHEED)
  • 19. Rutherford backscattering spectrometry (RBS)
  • 20. Scanning electron microscopy (SEM)
  • 21. Scanning transmission electron microscopy (STEM)
  • 22. Scanning tunneling microscopy and scanning force microscopy (STM and SFM)
  • 23. Sheet resistance and the four point probe
  • 24. Spreading resistance analysis (SRA)
  • 25. Static secondary ion mass spectrometry (Static SIMS)
  • 26. Surface roughness: measurement, formation by sputtering, impact on depth profiling
  • 27. Total reflection x-ray fluorescence analysis (TXRF)
  • 28. Transmission electron microscopy (TEM)
  • 29. Variable-angle spectroscopic ellipsometry (VASE)
  • 30. X-ray diffraction (XRD)
  • 31. X-ray fluorescence (XRF)
  • 32. X-ray photoelectron spectroscopy (XPS)
  • Index.

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